Fundamental Limits on the Mobility of Nanotube-Based Semiconducting Inks

Citation: Nima Rouhi, Dheeraj Jain, Katayoun Zand, Peter John Burke, Advanced Materials (2011), 23, 1, 94-99.

Summary: High mobility and high on/off ratio thin-film transistors are fabricated using solution-based deposition of purified semiconducting carbon nanotubes. A comprehensive spectrum of the density starting from less than 10 tubes μm-2 to the high end of around 100 tubes μm-2 is investigated. This study provides the first important roadmap for the tradeoffs between mobility and on/off ratio in nanotube-based semiconducting inks.