80 GHz Field-Effect Transistors Produced Using High Purity Semiconducting Single-Walled Carbon Nanotubes

Citation: L. Nougaret, H. Happy, G. Dambrine, V. Derycke, J. -P. Bourgoin, A. A. Green, M. C. Hersam, Applied Physics Letters (2009) 94, 243505.

Summary: In this study, solutions of 99% pure semiconducting nanotubes were used to fabricate SWNT field-effect transistors (FETs) with extrinsic and intrinsic current gain cutoff frequencies of ~15 and ~80 GHz, respectively. Importantly, this study also demonstrates that precise nanotube alignment is not required to achieve excellent performance in high-frequency devices.