Summary: We report on the memory effect of single-walled carbon nanotubes (SWNTs (placed on a nitride-oxide layer structure designed as a charge storage medium. The conductance of the SWNT was modulated by the injected charge in the nitride-oxide interface and the polarities of injected charges were then detected. A large on/off-state current ratio ≶104(was obtained at a small program/erase voltage range ≶3 V(. We also studied the effect of a half-selected cell on the conductance of the SWNTs to identify the issues with cross-point memory architecture.
Memory Effect of a Single-Walled Carbon Nanotube on Nitride-Oxide Structure Under Various Bias Conditions
